A research group led by Associate Professor Yuji Sutou, Professor　Junichi Koike, Yuta Saitoh, Toshiya Kamata and Masashi Sumiya at　Graduate School of Engineering, Tohoku University has developed materials for Ge-Cu-Te phase-change random access memories with a high　thermal stability and a low melting point.  The achievement helps to solve a　problem such as data loss under the environment at high temperatures and　to reduce power consumption for data rewriting.

 Involatile memories such as flash memory can save data after being shut　down, and have been used in various fields.  Recently, it has been　expected to increase a speed and capacity of semiconductor memories such　as flash memory due to a rapid market growth for digital cameras, music　players and portable electronic devices including cell phones. Phase-change random access memories (PCRAMs) have gathered attention as　next-generation involatile memories for high-speed data rewriting.　PCRAMs with simple structures seem to be more favorable for　cost-effective production and high integration among other candidates　including magnetic random access memory (MRAM) and ferroelectric random　access memory (FeRAM).

 Newly developed Ge-Cu-Te phase-change materials have a melting point　of approximately 100 degrees C lower than that of Ge-Sb-Te materials. The　achievement will help to reduce power consumption and to save data for　ten years under the environment at more than 125 decrees C.  The new　materials can be applied for involatile PCRAMs used at high temperatures　including automotive field, as well as fast USB memories.  PCRAM devices　will be developed and functions such as rewriting will be verified.  The　research result will be presented at the symposium on PCRAM researches in　Atami, Shizuoka Prefecture on November 25, 2010.

More Information (Japanese)

[Contact]
Associate Professor Yuji Sutou
Graduate School of Engineering, Tohoku University
TEL/FAX： +81-22-795-7338
E-mail： ysutou*material.tohoku.ac.jp (Replace * with @)