Professor Tetsuo Endoh, Center for Spintronics Integrated Systems and Graduate School of Engineering, Tohoku University and a group led by Professor Hideo Ohno, Center for Spintronics Integrated Systems and Research Institute of Electrical Communication, Tohoku University, Sendai, Japan, have developed the world’s first embedded memory that can transfer data as fast as today’s state-of-the-art Static Random Access Memory (SRAM) 1 while maintaining its data even without power. This has been achieved by combining the magnetic tunnel junction (MTJ) technology that has been extensively researched in Tohoku University and state-of-the-art silicon technologies in an academic-industrial alliance with NEC Corporation, Tokyo, Japan. They succeeded in verifying the operating principle of the memory by measuring the 1Mb macro based on the MTJ fabrication technology developed in Tohoku University. They claim that this is a big leap toward lowering power consumption of today’s LSIs, which are struggling for performance gain through miniaturization against increases in power.

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Naoki Kasai, Deputy Director

Center for Spintronics Integrated Systems, Tohoku University

TEL: +81-22-217-6115

E-mail: n-kasai*csis.tohoku.ac.jp (Replace * with @)