2012 | Press Release
Discovery of a new topological material: Significant progress toward the development of next generation energy-saving devices
The research group consisting of Associate Professor Takafumi Sato of the Graduate School of Science, Tohoku University; Professor Yoichi Ando, The Institute of Scientific and Industrial Research, Osaka University; and Professor Takashi Takahashi, Advanced Institute for Material Research, Tohoku University, has established that tin telluride (SnTe) semiconductors, which has been studied as ordinary narrow-gap semiconductor for over 40 years, is a completely new type of topological material. The research group found that SnTe bears a topological current protected in a ‘new’ principle essentially different from the known topological materials. This achievement would contribute to developing the materials to be utilized in spintronic technology underlying the next-generation energy-saving devices.
The research results have been published onine in Nature Physics on September 30, 2012 (GMT).
[Contact]
Associate Professor Takafumi Sato
Graduate School of Science, Tohoku University
TEL: +81-22-795-6477
E-mail: t-sato*arpes.phys.tohoku.ac.jp (Replace * with @)
Professor Takashi Takahashi
Advanced Institute of Materials Research, Tohoku University
TEL: +81-22-795-6417
E-mail: t.takahashi*arpes.phys.tohoku.ac.jp (Replace * with @)
